PART |
Description |
Maker |
2SC5026 |
Silicon NPN Epitaxial Planar Type Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
BF622 Q62702-F1052 |
From old datasheet system NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
PC451 |
High Collector-emitter Voltage Photocoupler
|
Sharp Microelectronics
|
PC8D52 PC8Q52 |
High Collector-emitter Voltage Type Photocouplers
|
http:// SHARP[Sharp Electrionic Components]
|
PZTA42 PZTA4207 |
NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
MMBTA42 SMBTA4207 |
NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage
|
Infineon Technologies AG
|